List of confirmed invited talks (tentative titles)

Bengt Svensson, University of Oslo, Norway, Oxide Semiconductors: Ion Implantation and Defects.

Martin Engler, Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden,  Germany, “Reverse Epitaxy”on semiconductor surfaces by low energy ion irradiation.

Wilhelm Kegel, centrotherm photovoltaics AG, Blaubeuren, Germany, Enabling Processing Strategies for Advanced Semiconductor Manufacturing.

Enrico Napolitani, University of Padova, Italy, Advanced strategies for shallow junction formation in Ge.

Slawomir Prucnal, Helmholtz-Zentrum Dresden-Rossendorf, Germany, Ge comeback - new properties of an old material.

Yonder Berencen, Helmholtz-Zentrum Dresden-Rossendorf, Germany, Non-equilibrium thermal processing for hyperdoping Si.

Halina Krzyzanowska, Vanderbilt University, Nashville, USA and Maria Curie-Skłodowska University, Lublin, Poland, Characterization of implanted semiconductors using coherent acoustic phonon spectroscopy.

Peter Gaiduk, Belarussian State University, Minsk, Belarus, Irradiation induced self-assembly of nano-voids in strained layers and nano-dots.

Fadei F. Komarov, Belarussian State University, Minsk, Belarus, Ion-beam formation and modification of InAs nanoclusters in silicon and silica.

Jacek Jagielski, Institute of Electronic Materials Technology, Warszawa, Poland, Structural and functional properties of ion-irradiated graphene-elastomer composites.