The idea of ION Conferences has been stimulated by the permanent success and steady increasing interest in ion implantation techniques, which have emerged from fundamental research in ion and plasma physics and established themselves as standard methods for material modification and characterization.
The following topics represent the
focus of the ION 2016:
formation and modification of subsurface layers using ion, electron and plasma electron technologies,
ion beam micro- and nano-engineering,
plasma – based and ion beam – assisted deposition method,
research methods with application of ions and electrons,
fundamentals of ion beam interactions with solids.
The range of materials includes metals, semiconductors, insulators, polymers, etc.
YOUNG SCIENTISTS CONTEST
During the ION 2016 Conference a special Young Scientists Session will be organized. Prizes will be awarded for the best 15 minutes oral and poster presentations. The Contest aims at Ph.D. students and scientists with not more than 6 years after their Ph.D. defence. The jury will be appointed by the Scientific Committee of the ION 2016 Conference.
In order to participate in the Young Scientists Contest, a candidate is asked to submit a short CV together with an
abstract not later than
CONTRIBUTIONS
ION 2016 SITE
February 10, 2016
LIST OF CONFIRMED INVITED TALKS (tentative titles)
Bengt Svensson, University of Oslo, Norway, Oxide Semiconductors: Ion Implantation and Defects
Feng Chen, Shandong Univ., China, Ion beam irradiation applied to optical crystals and 2D materials towards applications in integrated photonics
Wilhelm Kegel, centrotherm AG, Blaubeuren, Germany, Enabling Processing Strategies for Advanced Semiconductor Manufacturing
Enrico Napolitani, Univ. of Padova, Italy, Advanced strategies for shallow junction formation in Ge
Slawomir Prucnal, Helmholtz-Zentrum Dresden-Rossendorf, Germany, Ge comeback - new properties of an old material
Ye Yuan, Helmholtz-Zentrum Dresden-Rossendorf, Germany, Ferromagnetic semiconductors: Preparation and tailoring by ion implantation
Yonder Berencen, Helmholtz-Zentrum Dresden-Rossendorf, Germany, Non-equilibrium thermal processing for hyperdoping Si
Halina Krzyzanowska, Vanderbilt University, Nashville, USA and Maria Curie-Skłodowska University, Lublin, Poland, Characterization of implanted semiconductors using coherent acoustic phonon spectroscopy
Registration
Useful Info
You are cordially invited to participate in the XI-th International Conference "Ion Implantation and Other Applications of Ions and Electrons", ION 2016. The conference will be held in Kazimierz Dolny, Poland, from June 13 to June 16, 2016. ... more
List of confirmed invited talks (tentative titles). ...more